▎ 摘　　要

NOVELTY - The MOSFET has a source/drain region formed on a semiconductor substrate. A channel region is arranged on the source/drain region. Portions of the channel region and the source/drain region are respectively matched with a gate dielectric and a gate conductor. The gate conductor is extended toward an upper part of the source/drain region. The insulating spacer layer is formed between the gate dielectric and the source/drain region. The channel region is matched with the insulating spacer layer. The semiconductor substrate is formed with an oxide semiconductor substrate and a graphene layer. USE - MOSFET. ADVANTAGE - The MOSFET reduces parasitic resistance. DETAILED DESCRIPTION - The insulating spacer layer is made of silicon nitride (Si3N4), silicon di-oxide (Si02), aluminum oxide (Al203), hafnium oxide (HfO2), zirconium dioxide (ZrO2), titanium oxide (TiO2), lanthanum oxide (La203), bismuth oxide (Bi203), Tantalum oxide (Ta2O3), nitrogen oxide (NiO), copper oxide (CuO), vanadium oxide (V2O5), Niobium pentoxide (Nb2O5), lanthanum aluminum oxide (LaAlO3), strontium titanate (SrTi03), lanthanum titanate (LaTiO3), lanthanum vanadate (LaVO3), lithium niobate (LiNbO3), lead zirconate (PbZrO3), lead titanate (PbTiO3), lithium tantalate (LiTaO3) or potassium tantalate (KTaO3) material. An INDEPENDENT CLAIM is also included for an MOSFET manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of an MOSFET.