• 专利标题:   Silicon quantum dots-layered molybdenum disulfide/reduced-graphene oxide composite material for electrode material of super capacitor, is obtained by utilizing composite body of reduced graphene oxide as network support.
  • 专利号:   CN108520832-A
  • 发明人:   WU J, FENG Y, DU L, ZHU S
  • 专利权人:   HARBIN INST TECHNOLOGY
  • 国际专利分类:   H01G011/30, H01G011/36
  • 专利详细信息:   CN108520832-A 11 Sep 2018 H01G-011/30 201865 Pages: 14 Chinese
  • 申请详细信息:   CN108520832-A CN10280362 02 Apr 2018
  • 优先权号:   CN10280362

▎ 摘  要

NOVELTY - A silicon quantum dots-layered molybdenum disulfide/reduced-graphene oxide composite material is obtained by utilizing a composite body of reduced graphene oxide as a network support and a nano-flower sphere of silicon quantum dot composite molybdenum disulfide as a dispersion material, where the nano-flower sphere is embedded between the layers of the reduced graphene oxide and the nano-flower sphere of silicon quantum dot composite molybdenum disulfide is a three-dimensional nano-flower sphere with silicon quantum dots as core that is formed by stacking molybdenum disulfide. USE - Silicon quantum dots-layered molybdenum disulfide/reduced-graphene oxide composite material for an electrode material of a super capacitor (claimed). ADVANTAGE - The silicon quantum dots-layered molybdenum disulfide/reduced-graphene oxide composite material has high specific capacitance and high current density. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for preparing a silicon quantum dots-layered molybdenum disulfide/reduced-graphene oxide composite material.