• 专利标题:   Lithography of graphene device involves transferring graphene into target substrate, spin-coating polymethylmethacrylate material on graphene, subjecting graphene to deep ultraviolet lithography and depositing metal electrode on graphene.
  • 专利号:   CN106647183-A
  • 发明人:   WANG N
  • 专利权人:   INST MICROELECTRONICS CHINESE ACAD SCI
  • 国际专利分类:   G03F007/20, H01L021/027
  • 专利详细信息:   CN106647183-A 10 May 2017 G03F-007/20 201739 Pages: 10 Chinese
  • 申请详细信息:   CN106647183-A CN11257272 30 Dec 2016
  • 优先权号:   CN11257272

▎ 摘  要

NOVELTY - Lithography of graphene device involves transferring graphene into a target substrate, spin-coating the polymethylmethacrylate material on a surface of the graphene, subjecting graphene to deep ultraviolet lithography, depositing a metal electrode on the surface of the graphene, dissolving the polymethyl methacrylate material on the surface of the graphene by N-methylpyrrolidone, peeling off excess portion of the metal electrode and washing graphene with isopropanol solution and deionized water. USE - Lithographic method of graphene device (claimed). ADVANTAGE - The method enables reliable and repeatable lithography of graphene device by effectively avoiding contamination of photolithographic photoresist graphene.