▎ 摘　　要

NOVELTY - Preparation of fluorinated graphene using atomic layer deposition device includes etching copper foil with graphene using corrosive solution; cleaning surface of substrate, moving parallel to floating graphene; washing with deionized water, ethanol and acetone, drying; reacting with fluorinating agent in atomic layer deposition device at 250 degrees C, closing first to fourth valve; opening valves, passing carrier gas, opening second valve, passing carrier gas in glass-metal conversion member; closing first, second and fourth valves, opening third valve; and taking out transfer substrate. USE - Method for preparing fluorinated graphene using atomic layer deposition device (claimed) used for electronic device, lubricating material and high-capacity lithium battery. ADVANTAGE - The operation is simple and convenient. DETAILED DESCRIPTION - Preparation of fluorinated graphene using atomic layer deposition device comprises: (A) placing copper foil with graphene on corrosive solution, etching; using ultraviolet radiation ozone analyzer, transferring organic impurities to clean surface of substrate by moving substrate parallel to floating graphene in corrosive solution; (B) washing transferred substrate with graphene using deionized water, ethanol and acetone, drying with nitrogen gas; (C) placing transferred substrate with graphene parallel to reaction chamber of atomic layer deposition device, taking 5-50 g fluorinating agent, placing on glass metal of atomic layer deposition device; (D) keeping reaction chamber temperature at 250 degrees C, starting vacuum pump, controlling pressure at 1 mtorr, closing first to fourth valve; (E) opening first-fourth valve, passing carrier gas at 10-100 cm3/minute (sccm) for 1-10 minutes, opening second valve, passing carrier gas in glass-metal conversion member at 1-20 sccm for 10-90 seconds; (F) closing first, second and fourth valve for 15 seconds, opening third valve; and (G) repeating steps F and G, circulating for 10-100 times and taking out transfer substrate. The atomic layer deposition device comprises reaction chamber (1), supporting frame (2), glass-metal conversion element (3) and gas cylinder (4). The air outlet of carrier gas cylinder is divided into two paths. One path is connected to first valve (5). The other path is connected to second valve (6). The second valve is connected to glass-metal conversion element, which is connected to reaction chamber trough air inlet provided with third valve (7). The other end of reaction chamber is connected with air outlet equipped with fourth valve (8). The air outlet is connected to vacuum pump (9). DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of atomic layer deposition device. Reaction chamber (1) Supporting frame (2) Glass-metal conversion element (3) Gas cylinder (4) Valve (5,6,7,8) Vacuum pump (9)