• 专利标题:   Manufacturing a nanocrystalline cemented carbide material involves stirring and pulverizing a mixture containing metal carbide powder and graphene to form nanopowder and applying pulse current to the nanopowder while pressing the nanopowder.
  • 专利号:   KR2020102288-A, KR2185476-B1
  • 发明人:   SHON I J, KIM S E
  • 专利权人:   UNIV CHONBUK NAT IND COOP FOUND
  • 国际专利分类:   C04B035/56, C04B035/626
  • 专利详细信息:   KR2020102288-A 31 Aug 2020 C04B-035/56 202077 Pages: 14
  • 申请详细信息:   KR2020102288-A KR020739 21 Feb 2019
  • 优先权号:   KR020739

▎ 摘  要

NOVELTY - Manufacturing a nanocrystalline cemented carbide material involves stirring and pulverizing a mixture containing metal carbide powder and graphene to form nanopowder having an average particle diameter smaller than that of the mixture; and applying a pulse current to the nanopowder while pressing the nanopowder. USE - Method for manufacturing a nanocrystalline cemented carbide material. ADVANTAGE - The method enables to manufacture a nanocrystalline carbide material having excellent mechanical properties, improved hardness, strength and fracture toughness. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart for a method of manufacturing a cemented carbide material.