▎ 摘　　要

NOVELTY - Preparing vertical emission luminous device based on graphene and medium distributed Bragg reflector (DBR) comprises extending non-doped gallium nitride (GaN) on substrate, preparing a dielectric DBR on the non-doped GaN layer, covering a graphene layer on the medium DBR, etching the graphene layer and the dielectric DBR exposes the non-doped GaN layer, forming a patterned underlying dielectric DBR, epitaxially forming a GaN merged layer on the exposed region of the non-doped GaN layer and the patterned underlying dielectric DBR, forming an epitaxial bulk layer on the GaN merged layer, forming a conductive layer on the epitaxial body layer, and preparing a patterned top-layer dielectric DBR on the conductive layer to obtain the vertical emitting light emitter. USE - Preparing vertical emission luminous device based on graphene and medium DBR. ADVANTAGE - The method enables to prepare vertical emitting light emitting device based on graphene and medium DBR, which greatly reduces the production cost of the device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for vertical emission luminous device based on graphene and medium DBR prepared by the above method. DESCRIPTION OF DRAWING(S) - The drawing shows schematically shows a vertical emission luminous device based on graphene and medium DBR. 10Conductive layer 11Patterning top medium dbr 12Epitaxial main body layer 13Patterned bottom layer dielectric dbr 00Substrate 01Non-doped gan layer 02Medium dbr 03Graphene layer 04GaN combined layer 05N type doped gan electron injection layer 06Quantum well structure active area 07P-doped algan electron barrier layer 08P-type doped GaN hole injection layer 09Heavily doped p-type GaN ohm contact layer