• 专利标题:   Anti-pollution FET sensor, has graphene layer fixed on insulating substrate, and source drain electrode fixed with ends of graphene composite film, where covalent organic framework material is grown on graphene surface.
  • 专利号:   CN110231380-A
  • 发明人:   WEI D, YANG L
  • 专利权人:   UNIV FUDAN
  • 国际专利分类:   G01N027/30, G01N027/414, G01N027/48
  • 专利详细信息:   CN110231380-A 13 Sep 2019 G01N-027/30 201977 Pages: 12 Chinese
  • 申请详细信息:   CN110231380-A CN10512421 13 Jun 2019
  • 优先权号:   CN10512421

▎ 摘  要

NOVELTY - The sensor has a graphene layer fixed on an insulating substrate. A source drain electrode fixed with two ends of a graphene composite film. Covalent organic framework material is grown on a graphene surface that is formed as conductive sensing channel layer. The covalent organic framework material is selected from boric acid covalent organic framework material and triazine covalent organic framework material, where thickness of the covalent organic framework material is 10 nanometer to 500 nanometer. The covalent organic framework material is functionalized with modifying group of object-specific adsorption. USE - Anti-pollution FET sensor. ADVANTAGE - The sensor has high universality, low manufacturing cost and high anti-pollution performance, and eliminates influence of contaminants in solution. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an anti-pollution FET sensor detection method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of an anti-pollution FET sensor. '(Drawing includes non-English language text)'