• 专利标题:   Double trapezoidal graphene based broadband terahertz wave absorbing device, has double trapezoidal graphene layer and metal substrate separated by silicon dioxide medium layer, where metal substrate is made of gold.
  • 专利号:   CN107546492-A
  • 发明人:   XIAO B, GU M
  • 专利权人:   UNIV CHINA JILIANG
  • 国际专利分类:   G02B005/00, H01Q017/00
  • 专利详细信息:   CN107546492-A 05 Jan 2018 H01Q-017/00 201809 Pages: 6 Chinese
  • 申请详细信息:   CN107546492-A CN10480645 28 Jun 2016
  • 优先权号:   CN10480645

▎ 摘  要

NOVELTY - The device has a metal substrate (1), a silicon dioxide medium layer (2) and a double-trapezoid graphene layer (3), where the double trapezoidal graphene layer and the metal substrate are separated by the silicon dioxide medium layer. The metal substrate is made of gold. Distance (d) between the graphene layer and the metal substrate is 8 microns. Distance (d1) between two-layers of the Graphene is 1 microns. Bottom width of the graphene layer is 6.25 micron. Top width of the graphene layer is 5.25 micron. USE - Double trapezoidal graphene based broadband terahertz wave absorbing device. ADVANTAGE - The absorption spectrum of the terahertz wave by the graphene is simulated and calculated by the finite element method, and the structure of the device is optimized to obtain the ideal broadband wave absorbing effect. The device has simple structure, easy process and absorption efficiency of over 90%. The bandwidth of 1.85 THz can be achieved by superposing two layers of double trapezoidal graphene materials. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a double trapezoidal graphene based broadband terahertz wave absorbing device. Distance between graphene layer and metal substrate (d) Distance between two-layers of Graphene (d1) Metal substrate (1) Silicon dioxide medium layer (2) Double-trapezoid graphene layer (3)