▎ 摘　　要

NOVELTY - Formation of graphene nanopattern involves forming a graphene layer (200) on a substrate, forming a block copolymer layer (300) including regions (30A) and regions (30B), on the graphene layer and a region of the substrate which is not covered by the graphene layer, forming a mask pattern (300M) from the block copolymer layer (300) by removing regions (30A) and/or regions (30B) of the block copolymer, and patterning the graphene layer in a nanoscale using the mask pattern as an etching mask. USE - Formation of graphene nanopattern used in manufacture of graphene-containing device (all claimed). Uses include but are not limited to transistor, tunneling device, memory device, solar cell, photodetector, sensor and light-emitting device. ADVANTAGE - The method enables efficient and simple formation of graphene nanopattern. The graphene-containing device formed using the graphene nanopattern has high density. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) manufacture of graphene-containing device; and (2) graphene-containing device. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of forming the graphene nanopattern. Regions (30A,30B) Substrate (100) Underlayer (110) Graphene layer (200) Block copolymer layer (300)