• 专利标题:   Method for forming large-area graphene layer on porous substrate by chemical vapor deposition process.
  • 专利号:   TW201439359-A, TW456083-B1
  • 发明人:   YANG G J, YEN C, YANG G C C, YEN C H
  • 专利权人:   UNIV NAT SUN YAT SEN
  • 国际专利分类:   C23C016/00, C23C016/32
  • 专利详细信息:   TW201439359-A 16 Oct 2014 C23C-016/00 201503 Pages: 0 Chinese
  • 申请详细信息:   TW201439359-A TW112447 09 Apr 2013
  • 优先权号:   TW112447

▎ 摘  要

NOVELTY - A method for forming a large-area graphene layer on a porous substrate by chemical vapor deposition process is given. First, a carbon layer is formed on the porous substrate by chemical vapor deposition. Then the carbon layer is subjected to catalytic graphitization to convert it to a graphite layer. Finally, the graphite layer is subjected to liquid-phase exfoliation to yield a much thinner graphene layer. This invention is to directly form a large-area graphene layer on a porous substrate. Further, primary channels associated with the porous substrate are connecting with secondary channels associated with the graphene layer. As a result, such a supported large-area graphene layer could be used for filtration and separation of solids from liquid, adsorption of solute and ions in the solution, separation of molecules of different sizes in the solution, and separation of different gases in a gas stream. Many types of enhancement of separation and purification are achieved accordingly.