▎ 摘　　要

NOVELTY - Preparing Cu2ZnSnS4/ graphene composite semiconductor thin film comprises cleaning fluorine doped tin oxide (FTO) electric conduction glass substrate, using tin oxide, adding into acetone, adding anhydrous ethanol, ultrasonic cleaning using deionized water, drying, preparing graphene thin film framework, adding ethanediol solution, redox graphene powder, ultrasonic crushing, ultrasonic dispersing, absorbing graphene suspension, dripping into FTO glass conductive surface, drying, to obtain graphene thin film. USE - The thin film is used in dye-sensitized solar energy battery electrode and copper-based thin-film solar cell absorber layer (claimed). DETAILED DESCRIPTION - Preparing Cu2ZnSnS4/ graphene composite semiconductor thin film comprises (i) cleaning fluorine doped tin oxide (FTO) electric conduction glass substrate, using tin oxide, adding into acetone, adding anhydrous ethanol, ultrasonic cleaning using deionized water for 10 minutes, drying, (ii) preparing graphene thin film framework, adding 50 ml ethanediol solution, 0.01-0.1 g redox graphene powder, ultrasonic crushing, ultrasonic dispersing for 10 minutes, absorbing 0.02-0.1 ml graphene suspension, dripping into FTO glass conductive surface, drying at 60-200 degrees C, to obtain graphene thin film, (iii) preparing proir solution, adding 4 mmol calcium chloride, copper, 50 ml ethanediol, 2 mmol zinc chloride, 2 mmol stannous chloride, stirring to dissolve, adding 5-11 mmol thiourea, 0-1.28 g polyvinylpyrrolidone (PVP) magnetic stirring to dissolve, reacting to obtain proir solution, (iv) providing graphene thin film framework in Cu2ZnSnS4/ graphene composite semiconductor thin film, using graphite alkene with FTO electric conduction glass, adding into reaction kettle of polytetrafluoroethylene liner, adding graphene, using step (iii) polytetrafluoroethylene lining, thickening the kettle, using high pressure kettle, placing in high temperature dry box, reacting at 180-200 degrees C for 8-24 hours, using copper zinc tin sulfide (CZTS)/ graphene grows, cleaning for 3 times, using anhydrous ethanol and deionized water, using vacuum drying at 60 degrees C, (v) using scanning electron microscope (SEM), X ray diffraction (XRD), transmission electron microscope (TEM), laser raman spectrum equal analysis to obtain the product