▎ 摘　　要

NOVELTY - The infrared sensing device comprises a channel layer (20) including a transition metal dichalcogenide thin film (22), and a graphene layer (21) is stacked on top of the transition metal dichalcogenide thin film to form a heterojunction with the transition metal dichalcogenide thin film. Metal nanoparticles (30) are located on top of the graphene layer. A first electrode is used for contacting the graphene layer and a second electrode is used for contacting the transition metal dichalcogenide thin film. USE - Used as infrared sensing device having high sensitivity and low power consumption. ADVANTAGE - The device: provides high sensitivity, low power, and multi-band infrared sensing device, shows excellent performance in detecting person at night, light absorption rate of graphene can be compensated for through plasmon resonance of metal nanoparticles, and Fermi level of graphene is changed by graphene/TMD heterojunction structure, resulting in Schottky Internal quantum efficiency can be increased by occurrence of the barrier variable effect, NP/graphene/TMD heterojunction device can have 1000 times higher sensitivity and 1000 times lower power consumption than conventional NP/graphene devices. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of infrared sensing device (Drawing includes non-English language text). 10Substrate 20Channel layer 21Graphene layer 22Transition metal dichalcogenide thin film 30Metal nanoparticle