• 专利标题:   Preparation of antimony sulfide based inorganic thin film solar cell involves cleaning substrate using e.g. acetone, spin-coating mixed solution, depositing antimony sulfide thin film, growing graphene thin film and assembling thin film.
  • 专利号:   CN107863401-A
  • 发明人:   TAN X, XIAO Y, ZHU H, LI C, ZHANG L
  • 专利权人:   UNIV CHINA THREE GORGES
  • 国际专利分类:   H01L031/032, H01L031/0392, H01L031/0445, H01L031/18
  • 专利详细信息:   CN107863401-A 30 Mar 2018 H01L-031/032 201833 Pages: 10 Chinese
  • 申请详细信息:   CN107863401-A CN11003470 24 Oct 2017
  • 优先权号:   CN11003470

▎ 摘  要

NOVELTY - Preparation of antimony sulfide based inorganic thin film solar cell involves cleaning fluorine-doped tin oxide transparent conductive glass as substrate using e.g. acetone, spin-coating mixed solution on fluorine doped tin oxide, placing in furnace, depositing antimony sulfide thin film on fluorine doped tin oxide/titania film by thermal evaporation method, growing graphene thin film by chemical vapor deposition method and assembling graphene thin film and antimony sulfide thin film to obtain titania/antimony sulfide/graphene battery structure. USE - Preparation of antimony sulfide based inorganic thin film solar cell. ADVANTAGE - The preparation of antimony sulfide based inorganic thin film solar cell is economical and simple. The prepared solar cell has more stable device performance. DETAILED DESCRIPTION - Preparation of antimony sulfide based inorganic thin film solar cell involves ultrasonically cleaning fluorine-doped tin oxide transparent conductive glass as substrate using deionized water, ethanol and acetone for 5-15 minutes, washing with deionized water, drying with argon, mixing titanium tetraisopropoxide-ethanol solution with ethanolic hydrochloric acid solution, spin-coating on cleaned fluorine doped tin oxide, placing into tubular resistance furnace, annealing for 60 minutes in air at 500 degrees C to obtain fluorine doped tin oxide/titania film, depositing antimony sulfide thin film on fluorine doped tin oxide/titania film by thermal evaporation method, spin-coating dimethyl formamide solution of thioacetamide on surface of deposited antimony sulfide thin film, annealing for 30-60 minutes in argon atmosphere at 200-400 degrees C to obtain antimony sulfide thin film, growing graphene thin film by chemical vapor deposition method, heating copper foil from room temperature to 900-1200 degrees C in an argon atmosphere, introducing hydrogen at 900-1200 degrees C, annealing for 30-40 minutes, introducing argon, hydrogen and methane mixed gas, reacting for 10-30 minutes, cooling to room temperature under the protection of argon, etching copper foil grown with graphene using ferric nitrate solution, washing with deionized water to obtain graphene and assembling graphene thin film and antimony sulfide thin film using silver binder and silver wires as electrodes to obtain titania/antimony sulfide/graphene battery structure.