▎ 摘　　要

NOVELTY - The device has a substrate and a graphene element (304) is positioned on the substrate. An electrical lead is positioned on the substrate and is coupled to the graphene element. The substrate is provided with an overcoat of silicon dioxide to form a silicon dioxide layer to act as an insulating layer between the substrate and graphene element. An electrical trace is coupled to the electrical lead. The boron nitride layers sandwiches the graphene element and forms a graphene-boron nitride structure. USE - THz emitting device for generating THz radiation in imaging, medical, security, spectroscopy, ranging and telecommunications. ADVANTAGE - The carrier density is adjusted by the gate voltage to maximize the useful output of the device. The resulting beams interfere producing an essentially fully amplitude modulated laser beam. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a THz generator system; and (2) a method of generating THz radiation. DESCRIPTION OF DRAWING(S) - The drawing shows the top view of THz generating device. Graphene element (304) Metal strip (306) Numeral (312)