▎ 摘　　要

NOVELTY - The electrode has a silicon dioxide/sillicon substrate etched into a single-layer graphene channel. Two ends of the single-layer graphene channel are formed with a Hall cross frame. An end of the Hall cross frame is provided with an injection end. Another end of the Hall cross frame is provided with a detection end. The injection end is provided with a single-layer strong SOC material heterojunction part and the injection end metal titanium nitride/gold electrode. The detection end is provided with a multi-layer strong SOC material heterojunction part, where injection end and the detection end are fixed with the metal titanium nitride/gold electrode and fixed at two sides of a cross arm. USE - Fully two-dimensional room temperature spin field-effect transistor non-ferromagnetic electrode for use in electronic, optical and other fields. ADVANTAGE - The electrode avoids the interface problem in the evaporation process and injection of the non-iron magnetic electrode, avoiding the problem that the Curie temperature is difficult to reach the room temperature. The intensity can be adjusted by the grid pressure, the purpose of adjustable grid pressure is realized. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a fully two-dimensional room temperature spin field-effect transistor non-ferromagnetic electrode preparing method. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a fully two-dimensional room temperature spin field-effect transistor non-ferromagnetic electrode for use in electronic, optical and other fields. 1silicon dioxide/sillicon substrate 2Detection end titanium nitride/gold metal electrode 3Injection end titanium nitride/gold metal electrode 4Single-layer graphene hall cross frame channel 5Injection end single-layer strong soc material 6Detection end multi-layer strong soc material