▎ 摘　　要

NOVELTY - The transistor has a graphene sheet including channel (52C2) formed between source and drain, and gate formed at the channel, such that predefined number of path differences are formed between the source and drain. The path difference is formed, so that waves of electrons are passed through the channel, to generate destructive interference in the drain. The gate insulating layers (93,95) are formed between the gate and graphene sheet. USE - Quantum interference transistor. ADVANTAGE - The quantum interference transistor can be manufactured easily by using a simple arrangement. The power consumption of the quantum interference transistor can be reduced, since voltage applied to the gate to shift the phase of the wave of electrons passing through the channel is reduced. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) method for manufacturing quantum interference transistor; and (2) method for operating quantum interference transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the quantum interference transistor. Substrate (30) Channel (52C2) Lower and upper gate conductive layers (92,94) Gate insulating layers (93,95) Recess area (97)