• 专利标题:   Preparing bright high-conductivity graphene/copper complex material comprises e.g. preparing graphene/copper deposition liquid, adding gelatin and sodium dodecyl sulfate as additive, adding polyacrylamide and thiourea, and depositing.
  • 专利号:   CN113293417-A, WO2022253114-A1
  • 发明人:   WEI K, WANG S, WEI W, CHU F, DU Q
  • 专利权人:   UNIV CHANGZHOU, UNIV CHANGZHOU
  • 国际专利分类:   C25D015/00, C25D003/38, C25D005/10, C25D007/06, H01B013/00
  • 专利详细信息:   CN113293417-A 24 Aug 2021 C25D-003/38 202174 Pages: 9 Chinese
  • 申请详细信息:   CN113293417-A CN10618921 03 Jun 2021
  • 优先权号:   CN10618921

▎ 摘  要

NOVELTY - Preparing bright high-conductivity graphene/copper complex material comprises (i) preparing graphene/copper deposition liquid A called A, and adding gelatin and sodium dodecyl sulfate as additive into the A, (ii) preparing pure copper deposition liquid B called B, and adding polyacrylamide and thiourea as additive into B, and (iii) using direct current deposition method for depositing, where the depositing method is alternating deposition liquid deposition. USE - The method is useful for preparing bright type high-conductivity graphene/copper complex material. ADVANTAGE - The method: is easy to prepare, economical and environmental friendly; has reasonable ratio of graphene/copper deposition solution, controllable coating thickness, smooth and bright surface and high conductivity, uniform thickness of the plating layer, and high bonding strength with the matrix; and does not easy to peel off and fall off. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for the bright high-conductivity graphene/copper complex material prepared by above mentioned method, comprising lead or foil material.