▎ 摘　　要

NOVELTY - The graphene memory has a conductive semiconductor substrate (110), a source (122) and a drain (124) spaced apart from each other on the conductive semiconductor substrate. A graphene layer (130) is comprised to contact the conductive semiconductor substrate and spaced apart from and between the source and the drain. A gate electrode (150) is provided on the graphene layer. A Schottky barrier is formed between the conductive semiconductor substrate and the graphene layer such that the graphene layer is used as a charge-trap layer for storing charges. USE - Graphene memory. ADVANTAGE - Since the graphene layer is used as the charge-trap layer by using the Schottky barrier between the substrate and the graphene layer contacting the substrate, the trapped charges are uniformly distributed when the graphene layer having relatively high charge mobility is used as the charge-trap layer. Thus, the charge storage characteristics are improved effectively. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for operating graphene memory. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the memory device using graphene as the charge-trap layer. Conductive semiconductor substrate (110) Source (122) Drain (124) Graphene layer (130) Gate electrode (150)