• 专利标题:   Non-contact, dry-state patterning of conducting nanostructured material involves applying positive voltage signal to probe tip with respect to conducting nanostructured material, moving probe tip with respect to conducting nanostructured material, and generating electron field emission.
  • 专利号:   US2022005707-A1
  • 发明人:   BAUGHMAN R H, ALIEV A E
  • 专利权人:   UNIV TEXAS SYSTEM
  • 国际专利分类:   H01L051/00, H01L021/3213
  • 专利详细信息:   US2022005707-A1 06 Jan 2022 H01L-021/3213 202205 English
  • 申请详细信息:   US2022005707-A1 US305295 02 Jul 2021
  • 优先权号:   US048037P, US305295

▎ 摘  要

NOVELTY - Method of non-contact, dry-state patterning of a conducting nanostructured material, involves applying a positive voltage signal to a probe tip with respect to the conducting nanostructured material, moving the probe tip with respect to the conducting nanostructured material while maintaining a spatial separation between the probe tip and the conducting nanostructured material, generating electron field emission within the spatial separation with respect to the conducting nanostructured material, and removing material from at least a first portion of the nanostructured material, where the positive voltage signal comprises a periodic sequence of electrical pulses comprising substantially rectangular pulses having a pulse width of 1-10 musec at a frequency of 1-10 kHz.The method involves removing debris from the probe tip by generating a plasma between the probe tip and a counter electrode, and attracting debris from the first portion of the nanostructured material. USE - The method is useful for non-contact, dry-state patterning of a conducting nanostructured material. ADVANTAGE - The method enhances the heat-effected zone. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an apparatus for non-contact, dry-state patterning of conducting nanostructured material.