▎ 摘　　要

NOVELTY - Manufacture of N-type graphene involves (i) providing graphene to be doped from an initial graphene layer, by annealing a graphene-based material issued from the initial graphene layer, in forming gas at temperature of 300-400 degrees C for 2-4 hours and (ii) N-doping the graphene to be doped. The graphene to be doped is an annealed graphene-based material. USE - Manufacture of N-type graphene used for forming electrode e.g. cathode for organic LED, lithium-ion battery, transistors and solar cell (all claimed). ADVANTAGE - The method enables efficient manufacture of N-type graphene having excellent near-zero band-gap, electroconductivity, mobility, flexibility, and transparency. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) N-type graphene, which has two-dimensional peak at 2665-2675 cm-1 in Raman spectrum, and G peak at 1565-1575 cm-1; and (2) electrode, which comprises N-type graphene.