▎ 摘　　要

NOVELTY - Silicon-based network graphene micro-electro-mechanical systems (MEMS) sensor comprises silicon (Si) substrate (1), silicon carbide (SiC) film layer (6), mesh graphene film (2), polydimethylsiloxane (PDMS) protective layer (5), metal electrode (3) and metal lead. The upper surface of Si substrate is a SiC thin film layer. The upper surface of the SiC film layer is a network graphene film and metal electrodes located on both sides of the network graphene film. The upper surface of the mesh graphene film is a PDMS protective layer and lead the metal lead through the metal electrode. USE - Used as silicon-based network graphene MEMS sensor. ADVANTAGE - The sensor has high sensitivity, wide frequency band and fast response speed, sensitive chip has small size, light weight, high integration and easy installation; meets the requirement of direct stress measurement, compatibility and interchangeability; improves sensitivity coefficient and achieve the purpose of more direct and accurate measurement of stress and strain. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing silicon-based network graphene MEM systems sensor, comprising (i) performing thermal oxidation process on the Si substrate to grow a SiC thin film layer with a thickness of 100-300 nm as a dielectric layer for making a mask layer of graphene thin film; (ii) taking SiC thin film layer as the substrate, using ydrogen gas to flatten the surface of the substrate at a high temperature of 1600-1800 degrees C, heating surface of the SiC thin film layer to 1400 degrees C in a vacuum environment or higher to break the Si and C bonds on the substrate surface, Si atoms will sublimate from the surface before C atoms sublimate, and C atoms enriched on the surface will be reconstructed to form a graphene thin film sample with SiC as the substrate; (iii) fixing graphene film sample, and spin coating photoresist on the graphene film by using a homogenizer; (iv) placing rectangular metal mask on both sides of the graphene film sample, and aligning two, using a photolithography machine to etch and sputter to obtain a metal electrode; (v) placing a metal mask with a mesh pattern on the upper surface of the graphene film sample, and aligning the two, using photolithography machine to obtain mesh graphene film sample again by photolithography, using mercury lamp to expose the network graphene film sample, using NICP etching machine to etch the network graphene film sample with oxygen plasma, and obtaining a network graphene film, applying acetone on the surface of the mesh graphene film to dissolve the remaining photoresist, removing after the photoresist is completely dissolved and drying; and (vi) exposing obtained network graphene film to the air, applying liquid PDMS at room temperature on the surface of the network graphene film, forming PDMS protective layer, removing bubbles in vacuum, heating and solidifying at 120 degrees C. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the overall structure of silicon-based network graphene MEMS sensor.