▎ 摘　　要

NOVELTY - Preparing diamond/graphene heterojunction comprises (i) providing a diamond, and placing the diamond in a crucible containing a liquid catalyst, (ii) introducing the crucible in a tubular furnace, and heating at a first temperature for a first time, and (iii) cooling at the second temperature, and placing the obtained sample in an etching solution for etching. USE - Used as preparing diamond/graphene heterojunction. ADVANTAGE - The method: is economical and safe; has better product performance; improves the type of catalyst used for in-situ diamond growth of graphene; and obtains the ultrasonic resistant electrode based on the heterojunction, which has excellent stability. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) a diamond/graphene heterojunction, comprising a diamond substrate and a graphene layer bonded to the surface of the diamond substrate, where the diamond/graphene heterojunction is prepared by above mentioned method; (2) an ultrasonic resistant electrode, comprising (I) the heterojunction, (II) a flexible substrate located below the heterojunction, and an adhesive tape is adhered on the surface of the flexible substrate, and (III) wires, where the heterojunction is adhered to the flexible substrate through the adhesive tape, the graphene layer of the heterojunction is located on the side away from the flexible substrate, and the wire connects the graphene layer and the adhesive tape; and (3) preparing an ultrasonic resistant electrode, comprising processing step (i), (ii) and (iii) according to the above mentioned method, and further comprising (iv) combining the diamond/graphene heterojunction, the flexible substrate, the adhesive tape and the wire.