▎ 摘　　要

NOVELTY - The method involves forming a PVA layer on a substrate. An upper part of a PMMA layer is formed on the PVA layer, where thickness of the PVA layer is 80 to 120 nm and the PMMA layer is 180 nm to 250 nm. A graphene layer is formed in the PMMA layer. A graphene-containing layer is arranged on an upper part of a first metal layer, where thickness of the first metal layer is 50 nm to 100 nm. An upper part of a gate dielectric layer is arranged on the graphene layer and formed with second layer. A metal top gate electrode is located between source and drain electrodes of the gate dielectric layer. USE - Graphene device manufacturing method. ADVANTAGE - The method enables realizing graphene device from substrate and ensuring wide application range of the graphene device. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a graphene device manufacturing method.'(Drawing includes non-English language text)'