• 专利标题:   Fabricating etched surface on substrate comprises depositing layer of graphene on surface on substrate, patterning deposited layer of grapheme, and exposing surface on substrate to acid to etch surface on substrate.
  • 专利号:   WO2010065518-A1
  • 发明人:   BOLOTIN K, HONE J, KIM P, KLIMA M, STORMER H
  • 专利权人:   UNIV COLUMBIA NEW YORK
  • 国际专利分类:   G11C011/18, H01L043/06
  • 专利详细信息:   WO2010065518-A1 10 Jun 2010 G11C-011/18 201040 Pages: 23 English
  • 申请详细信息:   WO2010065518-A1 WOUS066220 01 Dec 2009
  • 优先权号:   US118919P, US186577P

▎ 摘  要

NOVELTY - Fabricating an etched surface on a substrate comprises: depositing at least one layer of graphene on the surface on the substrate; patterning the deposited at least one layer of graphene; and exposing the surface on the substrate to an acid to etch the surface on the substrate. USE - The method is useful for fabricating an etched surface on a substrate (claimed). ADVANTAGE - The method provides a device which is easy to fabricate. DETAILED DESCRIPTION - Fabricating an etched surface on a substrate comprises: depositing at least one layer of graphene on the surface on the substrate; patterning the deposited at least one layer of graphene; and exposing the surface on the substrate to an acid to etch the surface on the substrate.