▎ 摘　　要

NOVELTY - The electrode structure has graphene layers (231,232) that are provided on a semiconductor layer. An electrode is made of metal provided on the graphene layer. The graphene layer is configured to contact one of semiconductor layer and electrode containing metal. The semiconductor layer is comprised of graphene layer configured to change Schottky energy barrier between semiconductor layer and electrode containing metal, based on impurity of the semiconductor layer. USE - Electrode structure for semiconductor device such as FET (claimed) used in electronic device. ADVANTAGE - The graphene layer can be configured to reduce Schottky energy barrier between the substrate and electrode containing metal based on the impurity of the semiconductor layer changing the work function of graphene layer. The driving voltage can be decreased due to the reduction in contact resistance, and also size of the electrode region can be reduced due to the reduction in the contact resistance so that FET can be made small. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) FET; and (2) contact structure. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the FET. FET (200) Semiconductor substrate (210) Source region (221) Drain region (222) Graphene layers (231,232)