▎ 摘　　要

NOVELTY - A stack structure comprises a Si substrate; an under layer formed on the Si substrate; at least one epitaxial graphene layer formed on the under layer; Ni layer between the Si substrate and the under layer; and Cu layer between the Si substrate and the Ni layer. The under layer is a hexagonal boron nitride layer. The under layer is a 3C-SiC layer. USE - As a stack structure useful in electronic device (claimed). ADVANTAGE - The structure including the graphenes easily applied to various electronic devices. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for following: (1) forming a stack structure involving forming an under layer on a Si substrate; and growing at least one epitaxial graphene layer on the under layer; and (2) electronic device comprising the stack structure.