▎ 摘　　要

NOVELTY - The PUF has a FET including a first layer that is connected to a source and a drain, and a gate oxide layer is positioned between the first layer and a back-gate electrode. The FET is provided as multiple FETs. The FETs are positioned in an array. The first layer comprises graphene. The circuitry is connected to the FETs. The circuitry is positioned, such that the analog output current from each individual FET is convertible to an analog output voltage. The circuitry includes operational amplifier (Op-Amp) to convert the analog output current from each individual FET to analog output voltage. The circuitry includes analog-to-digital converter (ADC) to convert the analog output voltage to a binary output. USE - PUF used in sensor device, detector device, nanoelectronic device, optoelectronic device, plasmonic device, or biomedical device (all claimed). ADVANTAGE - (1) The graphene FET (GFET) PUFs can be designed to avoid fuzzy authentication logic and provide maximum reproducibility without any loss of entropy or randomness, so long as the CRPs are obtained at gate voltages close to the Dirac point. (2) The revised GFET characteristics of the first reconfiguration show dominant electron transport that is stable and does not revert back to the original characteristics over time, thus ensuring permanent reconfiguration, which is desired for a strong PUF. (3) The improvements can be made in area efficiency by reducing the size of the individual GFET devices, and a process that results in no loss of entropy. (4) The GFET PUFs can be made at low cost and are designed to utilize low power, be area efficient, and can be reconfigured effortlessly and remotely in the event of compromised security. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for fabricating PUF.