▎ 摘　　要

NOVELTY - The method for preparing a silicon carbide (SiC) nanowire array by a magnetic field induction method involves: (1) preparing a layer of tin metal catalyst on a substrate; plating a layer of metal nickel (Ni) on the surface of the SiC nanowire with uniform size distribution to obtain a Ni-SiC core-shell structure; (2) uniformly gluing an ethanol solution with the Ni-SiC core-shell structure on a substrate with a tin metal catalyst: (3) putting the substrate into a uniform magnetic field, heating the substrate, gradually increasing the size of the magnetic field when tin on the substrate begins to melt, and stopping heating when the SiC nanowire vertically stands in molten tin metal drops; and (4) cooling to normal temperature, inverting the substrate, putting the substrate into a hydrochloric acid solution, and removing the tin metal and the Ni shell layer by acid washing. USE - Method for preparing a SiC nanowire array by a magnetic field induction method. ADVANTAGE - The preparation method of the SiC nanowire array film has controllable orientation direction, controllable diameter and controllable period. The preparation of the nanowire array in a nondestructive manner through magnetic field induction has friendly substrate, cleanness, environmental protection and strong controllability.