▎ 摘　　要

NOVELTY - Controllably forming (M1) Bernal-stacked graphene layers involves cleaning a surface of a catalyst; annealing the surface of the catalyst; applying a carbon source onto the cleaned and annealed surface of the catalyst in a reaction chamber; and growing the Bernal-stacked graphene layers on the surface of the catalyst in the reaction chamber, where the number of formed Bernal-stacked graphene layers is controllable as a function of at least one growth parameter. USE - For controllably forming Bernal-stacked graphene layers; for Bernal-stacked graphene film (claimed); and for physical and optoelectronic applications. ADVANTAGE - The method is effective, scalable, and controllable for forming Bernal-stacked graphene layers that show distinct electronic band structures. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for Bernal-stacked graphene film (F1) comprising Bernal-stacked graphene layers, where the Bernal-stacked graphene layers are uniform in structure, and are in polycrystalline form.