▎ 摘　　要

NOVELTY - Detection device with broadband photoelectric response, comprises thallium-nickel-selenide nanosheets, which are metal source and drain electrode layers connected to corresponding lead electrodes for connecting to external test circuit. Thallium nickel selenide nanosheet is used as photosensitive element. Electrically insulating base comprises intrinsic high-resistance silicon substrate and silicon dioxide layer. Silicon dioxide layer covers intrinsic high resistance silicon substrate with thickness of 300 nm, Thallium-nickel-selenium nanosheets are mechanically exfoliated monolayers with thickness of 10 nm. Metal source and drain electrodes are metal composite electrodes, which are made by ultraviolet lithography and electron beam evaporation technology. Lower layer is source and drain chromium electrodes as adhesion layer, with thickness of 5 nm. Upper metal is source and drain gold electrodes with thickness of 70 nm, and thickness of lead electrodes is 200-400 nm. USE - The detection device with broadband photoelectric response is useful for photodiode detector device used for photoelectric detection of visible medium wave infrared. ADVANTAGE - The detection device has high response rate, wide spectrum photoelectric detection of visible medium wave infrared, high air stability, high integration degree, mature technique and can be repeated. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing the detector device with broadband photoelectric response, comprising (i) ultrasonically cleaning acetone, isopropanol, ethanol and deionized water to the surface of the substrate covered with high-resistance silicon substrate and silicon dioxide layer, and cut the substrate into 1 cm×1 cm samples by precision cutting technology, (ii) transferring platform micro-region positioning method, mechanically peeling off deposited and grown thallium-nickel-selenium nanosheets using blue adhesive tape, and transferring to the electrically insulating substrate generated by using dry transfer technology, and numbering and positioning, (iii) using a hot plate to bake and a glue spreader to evenly coat, evenly attaching photoresist AZ5214 to the substrate prepared and the thallium-nickel-selenide nanosheet, (iv) combining use of ultraviolet lithography, electron beam evaporation method and traditional stripping process to prepare metal source and drain electrode layers in contact with thallium nickel selenium nanosheets to form good contact, and (v) using standard semiconductor packaging technology, attaching the device to the PCB base, lead wires, and simply packaging to complete the preparation of the detector device with a composite structure. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the front side of a thallium-nickel-selenium symmetrical structure photodetector of a detection device with a broadband photoelectric.