▎ 摘　　要

NOVELTY - The method involves forming a substrate (1) on which a semiconductor circuit is formed and a contact hole. A conductive film (5) is formed on the contact hole. A catalyst metal film (6) is formed on the conductive film by a chemical vapor deposition method. A catalyst metal is deposited on a side wall of the contact hole of the catalyst metal film by a physical vapor deposition method. Graphene (9) and carbon nanotubes (8) are grown from the side wall of the contact hole and bottom of the contact hole, respectively. USE - Method for manufacturing a semiconductor device. ADVANTAGE - The method enables improving structural stability of the contact hole and stably performing chemical mechanical polishing (CMP) and realizing highly-conducting interlayer wiring formed of the carbon nanotubes and the graphene. The method enables easily etching the side wall of the contact hole and the catalyst metal film on the bottom of the contact hole and on an upper surface side of an interlayer insulating film as the etching with high translation characteristics is performed. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view illustrating a method for manufacturing wiring of a semiconductor device. Substrate (1) Conductive film (5) Catalyst metal film (6) Carbon nanotubes (8) Graphene (9)