▎ 摘　　要

NOVELTY - The improvement of conductivity of atmospheric pressure chemical vapor deposited graphene film involves (i) surface cleaning the copper foil, (ii) high temperature heat treating the treated copper foil at 700-1000 degrees C for 5-7 hours at argon flow rate of 200-500 sccm, and hydrogen flow rate of 0-50 sccm, (iii) heating the heat-treated copper foil at 900-1050 degrees C under argon-and-hydrogen protection conditions, introducing methane, (iv) terminating the introduction of methane and hydrogen, maintaining introduction of argon, cooling, and growing a graphene film on a copper substrate. USE - Improvement of conductivity of atmospheric pressure chemical vapor deposited graphene film (claimed). ADVANTAGE - The method improves the conductivity of atmospheric pressure chemical vapor deposited graphene film easily by simple process at low cost, without using additional equipment, and greatly reduces the square resistance of the graphene film.