▎ 摘　　要

NOVELTY - The structure (510) has an electrically conductive structure suspended above surface of a substrate (502), and a graphene layer on the surface of the substrate and beneath the suspended electrically conductive structure. A dielectric e.g. air and vacuum, is interposed between the electrically conductive suspended structure and the graphene layer. The graphene layer has a thickness in a range between one tenth of a nanometer (nm) and five nm. A bridge element is at distance ranging between about 100 to 300 nm above the surface of the substrate. USE - Suspended structure i.e. top gate structure, for use in a graphene device i.e. graphene p-n-p junction device, as a local current carrying wire for inducing a local magnetic field in a magnetic storage device (claimed). Can also be used for a point contact for local injection of current, and moving part in microelectromechanical device. ADVANTAGE - The dielectric simplifies fabrication procedure for the production of suspended structure, reduces manufacturing costs, eliminates unintentional damage to or doping of devices, and makes the structure compatible with large-scale complementary metal oxide semiconductor (CMOS) technology. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) a method for preparation of suspended structures (2) a suspended structure system comprising a set of base elements. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of a system with suspended structures. Substrate (502) Device (504) Electrodes (506) Suspended structure (510)