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  • 专利标题:   Graphene transferring element for high radio frequency device, has metal thin-film layer pattern and graphene layer stacked on adhesive part, where metal thin- film layer pattern and graphene layer have same shape.
  • 专利号:   US2013098540-A1, KR2013044646-A, US9214559-B2, KR1878739-B1
  • 发明人:   LEE J, LEE C, KIM Y, SONG H, HO L J, SEUNG L C, SEONG K Y, JAE S H, LEE J H, LEE C S, KIM Y S, SONG H J
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   B32B015/04, B32B003/14, B32B037/02, B32B009/04, H01L021/02, H01L021/336, H01L029/78, B29C065/52, B29C065/54, B32B037/26, B32B038/10, H01L029/16, H01L029/423, H01L029/66, H01L029/778, H01L029/786
  • 专利详细信息:   US2013098540-A1 25 Apr 2013 B32B-003/14 201330 Pages: 13 English
  • 申请详细信息:   US2013098540-A1 US659131 24 Oct 2012
  • 优先权号:   KR108807

▎ 摘　　要

NOVELTY - The element has a metal thin-film layer pattern (160) and a graphene layer (140) stacked on an adhesive part. The metal thin-film layer pattern and the graphene layer have a same shape. The adhesive part is selected from an adhesive tape, glue, polycarbonate, an epoxy resin, a thermal release tape, a water-soluble tape and a photoresist. The metal thin-film layer pattern is made of metal selected from gold, copper, nickel, titanium, iron, ruthenium, palladium and a combination. USE - Graphene transferring element for a high radio frequency device. ADVANTAGE - The transferring element protects the graphene layer by utilizing a metal thin-film layer in a transferring process and forming the metal thin-film layer on the graphene layer. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) a method for fabricating a graphene device (2) a method for transferring graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of a graphene transferring element. Substrate (110) Insulating layer (120) Graphene layer (140) Metal thin-film layer (150) Metal thin-film layer pattern (160)