• 专利标题:   Fabricating graphene layer involves cleaning, seeding substrate, depositing crystalline diamond on substrate, sputtering aluminum layer on crystalline diamond, treating surface of aluminum layer with ion beam damaging interface between aluminum layer and crystalline diamond.
  • 专利号:   US2023126873-A1
  • 发明人:   SCHIRMANN E, KHAN A
  • 专利权人:   AKHAN SEMICONDUCTOR INC
  • 国际专利分类:   C03C017/36
  • 专利详细信息:   US2023126873-A1 27 Apr 2023 C03C-017/36 202336 English
  • 申请详细信息:   US2023126873-A1 US980963 04 Nov 2022
  • 优先权号:   US875170P, US980963

▎ 摘  要

NOVELTY - Fabricating graphene layer involves cleaning, seeding a substrate, depositing crystalline diamond on the substrate, sputtering an aluminum layer on the crystalline diamond, where the aluminum layer is greater than 5-50 nanometer, treating a surface of the aluminum layer with an ion beam damaging an interface between the aluminum layer and the crystalline diamond, and converting the aluminum layer into the graphene layer on the crystalline diamond. USE - Method for fabricating graphene layer. ADVANTAGE - The method enables to fabricate graphene layer in simple manner. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a diamond graphene metal structure. 402Substrate 404Diamond layer 406Graphene layer 408Metal layer