▎ 摘　　要

NOVELTY - The stacked body (1) has a substrate (2) made of silicon carbide and having a first main surface forming an angle or less with a silicon plane. A graphene film (3) is arranged on the first main surface and having an atomic arrangement oriented in relation to an atomic arrangement of silicon carbide forming the substrate. An area ratio of a region has a full width at half maximum or less under raman spectroscopy analysis. The substrate has a disk shape and the substrate has a diameter. USE - Stacked body used in electronic device such as transistor. ADVANTAGE - The stacked body enables a high mobility to be stably ensured in an electronic device manufactured to include graphene film forming an electrically conductive portion. The efficiency of manufacture of an electronic device in which the stacked body is used is increased. The switching speed of an electronic device manufactured with the stacked body is increased. An electrode can be formed on the exposed surface to manufacture the electronic device in which a high mobility is stably ensured. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for electronic device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a structure of a field effect transistor (FET) including a graphene film. Body (1) Substrate (2) Graphene film (3) Source electrode (4) Drain electrode (5)