▎ 摘　　要

NOVELTY - Manufacture of graphene oxide reduced material involves synthesizing graphite oxide flakes in powder state from graphite flakes in powder state, forming graphene oxide dispersion solution by dispersing the graphite oxide flakes in a solvent, preparing cation reaction graphene oxide dispersion solution through the interaction of cation and pi -structure in an sp-2 region by positioning the cation at the center of an arrangement of carbon atoms connected by sp-2 bonding in two dimensions in the dispersion solution. USE - Manufacture of graphene oxide reduced material used for forming electrode for silicon-based semiconductor. ADVANTAGE - The method efficiently and economically provides graphene oxide reduced material having high dispersibility and thermal stability. DETAILED DESCRIPTION - Manufacture of graphene oxide reduced material involves synthesizing graphite oxide flakes in powder state from graphite flakes in powder state, forming graphene oxide dispersion solution by dispersing the graphite oxide flakes in a solvent, preparing cation reaction graphene oxide dispersion solution through the interaction of cation and pi -structure in an sp-2 region by positioning the cation at the center of an arrangement of carbon atoms connected by sp-2 bonding in two dimensions in the dispersion solution and preparing a cation reaction graphene oxide reduced material by reducing the cation reaction graphene oxide dispersion solution. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view explaining the cation- pi interaction in manufacture of graphene oxide reduced material. (Drawing includes non-English language text) Graphite oxide (AA) Detachment and dispersion (BB) Cation-pi interaction (CC)