• 专利标题:   Formation of reduced graphene oxide used for electronic device e.g. thin film transistor, involves forming graphene oxide on substrate, and providing graphene oxide with white light pulse to reduce graphene oxide.
  • 专利号:   US2014284718-A1, KR2014115198-A
  • 发明人:   LIM J A, SONG Y, HONG J, CHANG J Y, SONG Y W, HONG J M
  • 专利权人:   KOREA INST SCI TECHNOLOGY
  • 国际专利分类:   C01B031/04, H01L029/49, H01L029/786, B82B001/00, B82B003/00, C01B031/02
  • 专利详细信息:   US2014284718-A1 25 Sep 2014 H01L-029/49 201470 Pages: 13 English
  • 申请详细信息:   US2014284718-A1 US196058 04 Mar 2014
  • 优先权号:   KR029983

▎ 摘  要

NOVELTY - Graphene oxide is formed on substrate, and graphene oxide is provided with white light pulse, to reduce graphene oxide. USE - Formation of reduced graphene oxide used for electronic device e.g. thin film transistor (all claimed), display device, light-emitting diode and solar cell. ADVANTAGE - The reduced graphene oxide having high electroconductivity is prepared by environmentally-friendly, fast and simple process without using reducing agent and without performing separate patterning process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for thin film transistor (50), which consists of gate electrode (120), semiconductor (140) overlapped with gate electrode, and source electrode (150) and drain electrode (160) electrically connected to semiconductor and facing each other in center of semiconductor. The source electrode and drain electrode comprise reduced graphene oxide. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of thin film transistor. Thin film transistor (100) Substrate (110) Gate electrode (120) Gate insulating layer (130) Semiconductor (140) Source electrode (150) Drain electrode (160)