▎ 摘　　要

NOVELTY - A non-volatile phase-change reconfigurable silicon-based model converter, wherein a converter unit (100), comprises an input area, a conversion area (102), an output area, a silicon dioxide layer (104), a silicone substrate layer (105), a graphene layer (106) and an oxide film layer (107). The input area is set on one side of the converter unit. The output area is arranged on the other side of converter unit, and the conversion area is provided between the input area and the output area. The silicon oxide layer is arranged in the converter. The silicon substrate layer is set below the silicon dioxide layers. The graphene layer is provided on the upper surface of the transformer and the oxide film is provided above the graphene layer. USE - Non-volatile phase-change reconfigurable silicon-based model converter used as functional device in MDM system and multimode photonics field. ADVANTAGE - The non-volatile phase-change reconfigurable silicon-based model converter has high conversion efficiency, low loss, small size, high expandability, and simple device manufacturing. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method of non-volatile phase-change reconfigurable silicon-based model converter. DESCRIPTION OF DRAWING(S) - The drawing shows a non-volatile phase change of the reconfigurable silicon-model converter of the conversion area cross sectional view. Conversion region (102) First electrode (102a) Second electrode (102b) Internal phase change waveguide (102c) First silicon waveguide region (102d) Silicon dioxide layer (104) Silicon substrate layer (105) Graphene layer (106) Oxide film layer (107)