▎ 摘　　要

NOVELTY - The utility model claims high-temperature pressure test technology field, specifically claims a new chamber for graphene-resistant pressure sensor. the high-temperature pressure sensor is the cavity structure; the high temperature pressure sensor comprises a sensing external pressure graphene/boron nitride/boron nitride heterojunction, the graphene/boron nitride/boron nitride hetero-junction part is a chamber structure, the graphene/boron nitride/boron nitride heterojunction is a three-layer structure, comprising a top layer from top to bottom, the graphene layer and the bottom layer. The utility model claims a high-temperature pressure sensor utilizing graphene/boron nitride/boron nitride heterojunction as the sensitive element sensing the external pressure signal, device sensitivity does not depend on the pressure cavity, so it will not generate excessive noise pressure caused by temperature drift and noise pressure is reduced by 300 %, which can greatly improve device sensitivity under the high temperature environment.