▎ 摘　　要

NOVELTY - The transistor has a graphene which is connected to source electrode and drain electrode. An insulating material layer is equipped in lower portion of graphene and piezo material is equipped in the lower portion of graphene. A crossed obstacle regulating circuit of graphene is equipped in lower portion of piezo material. The piezo material is equipped in lower portion of graphene includes. The height of Fermi level of graphene is controlled. USE - Graphene single electron transistor for electronic device (claimed). ADVANTAGE - The processing speed of graphene single electron transistor is increased. The height of Fermi level of graphene is controlled, such that the On/Off of electricity is controlled effectively. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for electronic device. DESCRIPTION OF DRAWING(S) - The drawing shows a photographic view of the graphene single electron transistor.