▎ 摘　　要

NOVELTY - The method involves providing a graphene layer, a silicon oxide layer and a metal electrode. The graphene layer is coated on the silicon oxide layer, and the metal electrode is engraved on the graphene layer. A graphene layer is prepared (1). The polymethyl methacrylate solution is spin coated (2) as the first layer of glue. The graphene layer is transferred (3) to the surface of the silicon oxide layer. The AZ3100 photoresist is spin coated (4) as a second layer of glue. A pattern is formed (5) on the surface of the graphene layer. A metal electrode is prepared (6) on the surface of the graphene layer. The double layer is removed (7) to obtain graphene silicon composite. The graphene is immersed in aqueous ammonia to increase the mobility. USE - Method for preparing graphene-silicon composite photodetector. ADVANTAGE - The method utilizes an innovative double-layer glue process to obtain a graphene-silicon composite photodetector with high mobility. The method is featured with simple and convenient process flow and strong operability, which improves product yield. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a method for avoiding glowing effect of graphene during etching; and (2) a method for improving graphene mobility. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart illustrating the process for preparing graphene silicon composite photodetector. (Drawing includes non-English language text) Step for preparing graphene layer (1) Step for spin-coaing polymethyl methacrylate solution as the first layer of glue (2) Step for transferring graphene layer to the surface of the silicon oxide layer (3) Step for spin-coaing photoresist as a second layer of glue (4) Step for forming pattern on the surface of the graphene layer (5) Step for preparing metal electrode on the surface of the graphene layer (6) Step for removing double layer to obtain a graphene silicon composite (7)