▎ 摘　　要

NOVELTY - The device has a graphene layer formed on a silicon carbide substrate (102) i.e. wafer. A metallization layer is patterned on graphene, where the metallization layer forms electrodes such that terahertz frequency radiation is generated when the graphene is excited. The metallization layer forms a coplanar waveguide and an antenna over the graphene. An optical waveguide is integrated with the graphene and integrated into the substrate. The optical waveguide is formed below a position where the graphene is excited. The electrodes are formed as metal fingers (106) over a position of the graphene. USE - Electromagnetic device i.e. terahertz emission device. Uses include but are not limited to a laser, photoconductive switch, photonic mixer and photodetector, for medical imaging applications, security applications, communications applications, manufacturing applications and scientific spectroscopy applications. ADVANTAGE - The graphene has carrier mobility to be 10-100 times larger than low temperature gallium arsenide so as to provide higher photo-conductivity to the device. The graphene has photons with small energy for terahertz generation so as to reduce heat generation and enable high power terahertz generation using the graphene, thus preventing intrinsic problems for terahertz generation using the graphene due to unique electronic and photonic properties of the graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for fabricating an electromagnetic device. DESCRIPTION OF DRAWING(S) - The drawing shows a top view of a substrate with a graphene layer including an antenna metallization structure. Silicon carbide substrate (102) Graphene material (104) Metal fingers (106) Support structures (110) Spiral antenna structure (114)