▎ 摘　　要

NOVELTY - Preparing TaON-nickel-graphene ternary heterojunction photocatalytic material involves forming TaON-Ni(OH)2 core-shell structure material, dissolving nickel chloride and TaON sequentially in deionized water under ice bath, uniformly mixing to obtain mixed solution, adding NaBH4 powder to above mixture, and reacting for 15-24 hours under ice bath and magnetic stirring, suction filtering and washing obtained product with deionized water until filtrate became neutral, and finally drying to obtain TaON/Ni(OH)2 core-shell structure material, preparing TaON-nickel-graphene ternary heterostructure, spreading pre-prepared TaON/Ni(OH)2 material in quartz boat, placing quartz boat in chemical vapor phase in quartz tube of deposition tube furnace, introducing hydrogen-argon mixed gas into quartz tube. USE - Method for preparing TaON-nickel-graphene ternary heterojunction photocatalytic material. ADVANTAGE - The method enables to prepare TaON-nickel-graphene ternary heterojunction photocatalytic material that realizes controllable and dense coating of graphene protective layer on surface of TaON particle, and suppresses photo-etching of TaON. DETAILED DESCRIPTION - Preparing TaON-nickel-graphene ternary heterojunction photocatalytic material involves forming TaON-Ni(OH)2 core-shell structure material, dissolving nickel chloride and TaON sequentially in deionized water under ice bath, uniformly mixing to obtain mixed solution, adding NaBH4 powder to above mixture, and reacting for 15-24 hours under ice bath and magnetic stirring, suction filtering and washing obtained product with deionized water until filtrate became neutral, and finally drying to obtain TaON/Ni(OH)2 core-shell structure material, preparing TaON-nickel-graphene ternary heterostructure, spreading pre-prepared TaON/Ni(OH)2 material in quartz boat, placing quartz boat in chemical vapor phase in quartz tube of deposition tube furnace, introducing hydrogen-argon mixed gas into quartz tube, raising temperature to 900-950 degrees C, introducing carbon source methane gas to grow graphene at 900-950 degrees C, growing for 3-10 minutes, then rapidly cooling to room temperature to obtain obtained final product.