• 专利标题:   Non-volatility optical memory unit for e.g. optical device, has blocking layer and grid layer formed in light wave-guide i.e. electric conduction channel, and graphene layer connected with transverse tunnel.
  • 专利号:   CN104062775-A, CN104062775-B
  • 发明人:   JIANG X, LI Y, XU C, YANG J, YU H
  • 专利权人:   UNIV ZHEJIANG
  • 国际专利分类:   G02F001/01
  • 专利详细信息:   CN104062775-A 24 Sep 2014 G02F-001/01 201501 Pages: 10 Chinese
  • 申请详细信息:   CN104062775-A CN10303613 30 Jun 2014
  • 优先权号:   CN10303613

▎ 摘  要

NOVELTY - The unit has a blocking layer (2) and a grid layer (1) formed in a light wave-guide (5) i.e. electric conduction channel. A graphene layer (9) is connected with a transverse tunnel (4). A charge storage layer (3) is formed with the grid layer that is fixed with a capacitor. The charge storage layer is formed with a control gate layer. USE - Non-volatility optical memory unit for an optical device. Uses include but are not limited to light switch, micro-ring, Y-splitter, mach-Zehder interferometer and coupler (all claimed). ADVANTAGE - The unit has better graphene material usage effect, high compatibility and wide application range, and reduces power consumption. DESCRIPTION OF DRAWING(S) - The drawing shows a front sectional view of a non-volatility optical memory unit. Grid layer (1) Blocking layer (2) Charge storage layer (3) Transverse tunnel (4) Light wave-guide (5) Graphene layer (9)