▎ 摘　　要

NOVELTY - The method involves selecting a base substrate (12) i.e. silicon substrate, with a layer (16) i.e. blanket layer, including a sputtered carbon and another layer (18) with a metal over the former layer, where the latter layer is provided with an upper surface (20). A heat treatment is provided to the substrate in an ambient, where the heat treatment includes heating structure in a range from 550 degree Celsius to 1400 degree Celsius of temperature. The carbon in the former layer is used to pass through the latter layer to an upper surface and form a graphene layer on the upper surface. USE - Method for forming a graphene layer such as single layer graphene, few-layer graphene, multi-layer graphene, and mixture of single-layer, few-layer and multi-layer graphene (all claimed) for high frequency electronic device i.e. low-noise amplifier for communication application. ADVANTAGE - The method enables providing better thickness control for layer due to the amount of graphene formed as self-limited by the finite amount of carbon in metal-carbon layer and an amount to be fixed by the layer's atomic percent and the thickness of layer. DETAILED DESCRIPTION - The graphene layer is a single layer graphene, a few-layer graphene, a multi-layer graphene, and a mixture of single-layer, few-layer and multi-layer graphene. AN INDEPENDENT CLAIM is also included for a structure comprising a substrate and a graphene layer. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of a structure with a buried carbon source layer and a metal layer on a substrate according to a method for forming a graphene layer. Structure (10) Base substrate (12) Layers (16, 18) Upper surface (20)