▎ 摘　　要

NOVELTY - An ultra-low resistance ohmic contact graphene transistor comprises channel region formed between substrate, source and a drain, where substrate is located above the source and drain, and channel region has graphene layer, dielectric layer and a gate electrode from the bottom. USE - Ultra-low resistance ohmic contact graphene transistor. ADVANTAGE - The ultra-low resistance ohmic contact graphene transistor has reduced contact resistance and maximum oscillation frequency DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for method for preparing the ultra-low resistance ohmic contact graphene transistor, which involves forming a graphene layer, depositing a dielectric layer, and overlying the channel region on the dielectric layer through a photoresist pattern. The exposed dielectric layer and graphene layer are etched away. The evaporation source and drain ohmic contact metal forms an ohmic contact metal layer, followed by covering source and drain regions by photoresist pattern needed, forming a source electrode and a drain electrode and forming a gate.