▎ 摘　　要

NOVELTY - An etching method of single-sided germanium wafer comprises coating photoresist on front, back and circumferential directions of germanium wafer respectively to form a photoresist film, exposing photoresist film on front side, developing, soaking in acid etching solution to corrode the front side, continuously spraying with acid corrosive liquid, performing longitudinal incision and thinning process, subjecting to secondary longitudinal incision and thinning treatment under continuous spraying of the diversion liquid, grinding and leveling; and removing the photoresist film on the back side of germanium wafer and circumferential direction. The diversion liquid comprises 3-5 pts. wt. graphene powder, 0.4-0.6 pt. wt. amphoteric surfactant, 0.1-0.3 pt. wt. nonionic surfactant, 1.6-1.8 pt. wt. ammonium fluoride, 0.4-0.6 pt. wt. silane coupling agent, and 95-105 pts. wt. water. USE - The method is for etching single-sided germanium wafer. ADVANTAGE - The method improves the efficiency of germanium wafer thinning treatment, reduces surface roughness of germanium wafer, and improves the overall performance of the germanium wafer thinning treatment.