▎ 摘　　要

NOVELTY - Manufacture of nitrogen-doped graphene field effect transistor (FET) comprises immersing graphene field effect transistor to be treated with an exposed channel into a nitrogen-containing solution, and irradiating the exposed channel of the graphene field effect transistor to be processed in the nitrogen containing solution with a laser to obtain final product. USE - Method for manufacturing nitrogen-doped graphene FET. ADVANTAGE - The method enables utilizing the laser to irradiate the exposed channel of the graphene field effect transistor to be processed in the nitrogen-containing solution to manufacture the graphene FET, so that manufacturing performance is good, which solves problem that it is difficult to well perform doping operation, thus avoiding need to carry out high temperature heating, and avoiding high temperature heat treatment to a metal electrode in the FET to generate damage, and hence generating nitrogen doping operation and accurately controlling doping position. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart of a method for manufacturing nitrogen-doped graphene FET (Drawing includes non-English language text).