▎ 摘　　要

NOVELTY - A graphene wall/silicon composite heterojunction-based photoelectric detector preparing method involves performing a high temperature annealing on the silicon substrate in hydrogen, utilizing radio frequency-plasma enhanced chemical vapor deposition to grow a graphene wall on a silicon substrate under a certain pressure, turning on the radio frequency and setting the radio frequency power, after the growth of the graphene wall is completed, spin-coating two layers of photoresist on the graphene wall, and exposing an electrode pattern for utilizing photolithography, sequentially depositing chromium and gold films on the graphene wall for utilizing an electron beam evaporation, patterning the device by utilizing a stripping process, sequentially placing the sample in acetone and AZ400 to remove two used photoresists, and setting the radio frequency power and gas flow to the reactive ion etching machine to map the sample. USE - Method for preparing photoelectric detector. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a photoelectric detector.